DatasheetsPDF.com

C009T

GME
Part Number C009T
Manufacturer GME
Description N-Channel MOSFET
Published Sep 15, 2019
Detailed Description Production specification N-Channel Enhancement Mode Field Effect Transistor BL2300 FEATURES z VDS=20V,RDS(ON)=40m @VG...
Datasheet PDF File C009T PDF File

C009T
C009T


Overview
Production specification N-Channel Enhancement Mode Field Effect Transistor BL2300 FEATURES z VDS=20V,RDS(ON)=40m @VGS=4.
5V,ID=5.
0A Pb z VDS=20V,RDS(ON)=60m @VGS=2.
5V,ID=4.
0A Lead-free z VDS=20V,,RDS(ON)=75m @VGS=1.
8V,ID=1.
0A APPLICATIONS z Power Management in Note book.
z Portable Equipment.
z Battery Powered System.
z Load Switch.
z DSC.
ORDERING INFORMATION Type No.
Marking BL2300 C009T SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 20 VGSS Gate -Source voltage ±10 ID Maximum Drain current TA=25℃ 3.
8 IDM PD RθJA TJ,Tstg Pulsed Drain current Power Dissipation Thermal resistance,Junction-to-Ambient Operating Junction and StorageTemperature 15 1.
25 100 -55 to 150 Units V V A A W ℃/W ℃ C229 Rev.
A www.
gmicroelec.
com 1 Production specification N-Channel Enhancement Mode Field Effect Transistor BL2300 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-body Leakage Zero Gate Voltage Drain Current Drain-Source on-resistance Diode forward voltage On-State Drain Current Forward Transconductance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Symbol Test conditions V(BR)DSS VGS(th) IGSS VGS=0V,ID=250μA VDS=VGS, ID=250μA VDS=0V, VGS=10V VDS=0V, VGS=-10V IDSS VDS=20V, VGS=0V RDS(ON) VSD ID(ON) gF Qg VGS=4.
5V,ID=5.
0A VGS=2.
5V,ID=4.
0A VGS=1.
8V,ID=1.
0A VGS=0V,IS=1.
25A VDS=5V, VGS=4.
5V VDS=5V, ,ID=5A Qgs Qgd VDS=10V,VGS=4.
5V,ID=3.
5A Rg CISS COSS CRSS tD(ON) tR tD(OFF) tR VDS=0V,VGS=0V,f=1MHz VDS=15V,VGS=0V,f=1.
0MHz VDD =10V,RL = 10Ω, ,ID=1A, VGS=4.
5V,RGEN= 6Ω MIN 20 0.
6 - - 18 5 - TYP 0.
78 - - 32 50 62 0.
825 16.
8 2.
5 5.
4 7.
5 888 144 115 31.
8 14.
5 50.
3 31.
9 MAX 1.
5 100 -100 1 40 60 75 1.
2 - UNIT V nA μA mΩ V A S nC Ω pF ns C229 Re...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)