UMW R
UMW 2300A
UMW 2300N-Channel 20-V(D-S) MOSFET
V(BR)DSS
RDS(on)MAX
25mΩ@4. 5V 20 V
34. 5mΩ@2. 5V
ID
6A
SOT-23
1. GATE 2. SOURCE 3. DRAIN
FEATURE z TrenchFET Power MOSFET
APPLICATION z Load Switch for Portable Devices
z DC/DC Converter
MARKING
C009T
Equivalent Circuit
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source-Drain Current(Diode Conduction) Power Dissipation Thermal Resistance from Junction to Ambient (t≤5s) Operating Junction Storage Temperature
VDS VGS ID IS PD RθJA TJ TSTG
Value 20 ±12 6 0. 6
312. 5 150 -55 ~+150
Unit V
A W ℃/W ℃
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UMW R
UMW 2300A
Ta=25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Static Drain-source breakdown voltage Gate-threshold voltage Gate-body leakage Zero gate voltage drain current
Drain-source on-resistancea
Forward transconductancea
V(BR)DSS VGS(th) IGSS IDSS
rDS(on)
gfs
VGS = 0V, ID =10µA VDS =VGS, ID =50µA VDS =0V, VGS =±8V VDS =20V, VGS =0V VGS =4. 5V, ID = 6 A VGS =2. 5V, ID =5. 2A VDS =5V, ID =3. 6A
Diode forward voltage
VSD IS=0. 94A,VGS=0V
Dynamic Total gate charge Gate-source charge Gate-drain charge Input capacitance b Output capacitance b Reverse transfer capacitanceb Switchingb Turn-on delay time Rise time Turn-off delay time Fall time
Qg Qgs Qgd Ciss Coss Crss
VDS =10V,VGS =4. 5V,ID =3. 6A VDS =10V,VGS =0V,f=1MHz
td(on) tr
td(off) tf
VDD=10V, RL=5. 5Ω, ID ≈3. 6A, VGEN=4. 5V,Rg=6Ω
Notes : a. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. b. These parameters have no way to verify.
Min Typ Max Units
20 0. 40 1
±100 1
0. 021 0. 025 0. 028 0. 034
8 0. 74 1. 2
V
nA µA
Ω
S V
7. 7 10 0. 32 nC 2. 1 574 70 pF 60
78. 7 128 453 80. 9
ns
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UMW R
Typical Characteristics (TJ =25℃ Noted)
UMW 2300A
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UMW R
Typical Characteristics (TJ =25℃ Noted)
UMW 2300A
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C009T PDF File
