DatasheetsPDF.com

HX2301

HXDZ
Part Number HX2301
Manufacturer HXDZ
Description P-Channel MOSFET
Published Sep 15, 2019
Detailed Description SOT-23 Plastic-Encapsulate Transistors HX2301 MOSFET(P-Channel) FEATURES PWM applications Load switch Power management M...
Datasheet PDF File HX2301 PDF File

HX2301
HX2301


Overview
SOT-23 Plastic-Encapsulate Transistors HX2301 MOSFET(P-Channel) FEATURES PWM applications Load switch Power management MARKING: A1SHB MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage -20 V VGS Gate-Source voltage ±12 V ID Drain current -2.
3 A PD Power Dissipation 0.
9 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -20 V Gate-Threshold Voltage Gate-body Leakage Zero Gate Voltage Drain Current Drain-Source On-Resistance Vth(GS) IGSS IDSS rDS(ON) VDS= VGS, ID=-250 uA VDS=0V, VGS=±12V VDS=-20V, VGS=0V VGS=-4.
5V, ID=-2.
3A VGS=-2.
5V, ID=-1A -0.
4 -0.
7 -1 V ±100 nA -1 uA 96 135 mΩ 108 170 mΩ Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS=-10V, VGS=0V, f=1MHz 325 55 pF 35 Switching Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time td(on) tr td(off) tf VDD=-10V, ID=-1A, VGS=-4.
5V RGEN=-60ohm R L=10ohm 10 nS 6 nS 22 nS 8 nS Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg VDS=-10V, ID=-1A , Qgs VGS=-4.
5V, Qgd 3 nC 0.
7 nC 0.
8 nC Drain-Source Diode Characteristics Diode Forward Voltage VSD VGS=0V, ID=-1.
25A -1.
2 V Diode Forward Current Is -2.
3 A 1 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)