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TK4R3E06PL

Part Number	TK4R3E06PL
Manufacturer	Toshiba
Description	Silicon N-channel MOSFET
Features	(1) High-speed switching (2) Small gate charge: QSW = 15.1 nC (typ.) (3) Small output charge: Qoss = 39 nC (typ.) (4) Lo...
Published	Aug 7, 2019
Datasheet	TK4R3E06PL PDF File

Features

(1) High-speed switching (2) Small gate charge: QSW = 15.1 nC (typ.) (3) Small output charge: Qoss = 39 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) En...

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