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2N7002CK

nexperia
Part Number 2N7002CK
Manufacturer nexperia
Description N-channel MOSFET
Published Jul 3, 2019
Detailed Description 2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 11 September 2009 Product data sheet 1. Product profile 1.1 Gen...
Datasheet PDF File 2N7002CK PDF File

2N7002CK
2N7002CK

Overview
2N7002CK 60 V, 0.
3 A N-channel Trench MOSFET Rev.
01 — 11 September 2009 Product data sheet 1.
Product profile 1.
1 General description ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features I Logic-level compatible I Very fast switching I Trench MOSFET technology I ESD protection up to 3 kV 1.
3 Applications I Relay driver I High-speed line driver I Low-side loadswitch I Switching circuits 1.
4 Quick reference data Table 1.
Symbol VDS ID IDM Quick reference data Parameter drain-source voltage drain current peak drain current RDSon drain-source on-state resistance Conditions single pulse; tp ≤ 10 µs VGS = 10 V; ID = 500 mA Min Typ Max Unit - - 60 V - - 300 mA - - 1.
2 A - 1.
1 1.
6 Ω Nexperia 2.
Pinning information Table 2.
Pin 1 2 3 Pinning Symbol G S D Description gate source drain 2N7002CK 60 V, 0.
3 A N-channel Trench MOSFET Simplified outline Graphic symbol 3D 1 2G 3.
Ordering information Table 3.
Ordering information Type number Package Name Description 2N7002CK TO-236AB plastic surface-mounted package; 3 leads 4.
Marking Table 4.
Marking codes Type number 2N7002CK [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Marking code[1] LP* S 017aaa000 Version SOT23 2N7002CK_1 Product data sheet Rev.
01 — 11 September 2009 © Nexperia B.
V.
2017.
All rights reserved 2 of 13 Nexperia 2N7002CK 60 V, 0.
3 A N-channel Trench MOSFET 5.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min VDS drain-source voltage 25 °C ≤ Tj ≤ 150 °C - VGS gate-source voltage - ID drain current VGS = 10 V Tamb = 25 °C - Tamb = 100 °C - IDM peak drain current Tamb = 25 °C; tp ≤ 10 µs - Ptot total power dissipation Tamb = 25 °C [1] - Tj Tamb Tstg junction temperature ambient tempera...


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