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2SC4227

Part Number	2SC4227
Manufacturer	CEL
Description	NPN SILICON RF TRANSISTOR
Published	Jul 1, 2019
Detailed Description	DATA SHEET NPN SILICON RF TRANSISTOR NE68130 / 2SC4227 JEITA Part No. NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-...
Datasheet	2SC4227 PDF File

Overview

DATA SHEET NPN SILICON RF TRANSISTOR NE68130 / 2SC4227 JEITA Part No.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DISCONTINUED DESCRIPTION The NE68130 / 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.
It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package.
FEATURES • Low noise : NF = 1.
4 dB TYP.
@ VCE = 3 V, IC = 7 mA, f = 1 GHz • High gain : S21e2 = 12 dB TYP.
@ VCE = 3 V, IC = 7 mA, f = 1 GHz • 3-pin super minimold package ORDERING INFORMATION Part Number NE68130 -A 2SC4227 -A NE68130-T1-A 2SC4227-T1-A Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 3 (Collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC P Note tot Tj Tstg Ratings 20 10 1.
5 65 150 150 −65 to +150 Unit V V V mA mW °C °C Note Free air Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Document No.
PU10451EJ01V0DS (1st edition) (Previous No.
P10371EJ2V0DS00) Date Published December 2003 CP(K) The mark shows major revised points.
DISCONTINUED ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure Reverse Transfer Capacitance Symbol Test Conditions ICBO VCB = 10 V, IE = 0 mA IEBO VEB = 1 V, ...

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