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FQA10N60C |
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| Part Number | FQA10N60C |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• 10A, 600V, RDS(on) = 0.73Ω @VGS = 10 V • Low gate charge ( typical 44 nC) • Low Crss ( typical 18 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability G DS TO-3PN FQA Series G! D ! ● ◀▲ ● ● ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) ... |
| Document |
 FQA10N60C Data Sheet
PDF 648.67KB |
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