STGWA40HP65FB2 high-speed HB2 series IGBT

STGWA40HP65FB2 high-speed HB2 series IGBT

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A.

Features

• Maximum junction temperature : TJ = 175 °C
• Low VCE(sat) = 1.55 V(typ.) @ IC = 40 A
• Co-packaged protection diode
• Minimized tail current
• Tight parameter distribution
• Low thermal resistance
• Positive VCE(sat) temperature coefficient Applications
• Welding
• Power factor correction E(3) G1E3C2D Product status link STGWA40HP65FB2 Product summary Order code STGWA40HP65FB2 Marking G40HP65FB2 Package TO-247 long leads Packing Tube Description The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance .