PTFA220121M High Power RF LDMOS Field Effect Transistor

PTFA220121M High Power RF LDMOS Field Effect Transistor

The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS device offers excellent gain, efficiency and linearity performance in a nsmall overmolded plastic package. PTFA220121M Package PG-SON-10 desigTwo-tone Drive-up VDD = 28 V.

Features

• Typical two-carrier WCDMA performance at 2140 MHz, 8 dB PAR - POUT = 33 dBm Avg - ACPR =
  –45.5 dBc
• Typical two-carrier WCDMA performance at 877 MHz, 8 dB PAR - POUT = 33 dBm Avg - ACPR =
  –44.5 dBc
• Typical CW performance, 2140 MHz, 28 V - POUT = 41.6 dBm - Efficiency = 53.5% - Gain = 15.5 dB
• Typical CW performance, 877 MHz, 28 V - POUT = 41.8 dBm - Eff.