LSE60R092GF N-channel Power MOSFET

LSE60R092GF N-channel Power MOSFET

LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max RDS(on),max 650V 0.092Ω .

Features

 Ultra low RDS(on)
 Ultra low gate charge (typ. Qg = 66nC)
 100% UIS tested
 RoHS compliant Applications
 Power faction correction (PFC).
 Switched mode power supplies (SMPS).
 Uninterruptible power supply (UPS). TO-247 TO-220MF D TO-263 G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltage Avalanche energy, single pulse 2) Power Dissipation TO-247 ( TC = 25°C ) - Derate above 25°C Power .