AXUV63HS1 PHOTODIODE

AXUV63HS1 PHOTODIODE

PHOTODIODE Ø9mm AXUV63HS1 FEATURES • Circular active area • Ideal for electron detection • 100% internal QE • High speed Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS Active Area 9mm Responsivity, R (see graphs on next page) Rever.

Features

• Circular active area
• Ideal for electron detection
• 100% internal QE
• High speed Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS Active Area 9mm Responsivity, R (see graphs on next page) Reverse Breakdown Voltage, VR IR = 1μA Capacitance, C Rise Time VR = 0V RL = 50Ω, VR = 2V Dark Current VR = 150V MIN 160 TYP 63 MAX 10 2 100 THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient1 Nitrogen or Vacuum Maximum Junction Temperature Lead soldering temperature2 -10° TO 40°C1 -20°C TO 80°C 70°C 260°C 1Tem.