ODD-12W Datasheet

ODD-12W PHOTODIODE

PHOTODIODE 12mm2 FEATURES • TO-8 hermetic package • Circular active area • Low capacitance ODD-12W RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS Active Area Responsivity, R 4mm DIA. @ 632nm Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C Rise Time Se.

Features

• TO-8 hermetic package
• Circular active area
• Low capacitance ODD-12W RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS Active Area Responsivity, R 4mm DIA. @ 632nm Dark Current, Idr Reverse Breakdown Voltage, VR Capacitance, C Rise Time Series Resistance VR = 10V IR = 10A VR = 10V VR = 10V Vf = 1V THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Lead Soldering Temperature1 11/16" from case for 10 seconds. MIN 0.35 25 TYP 12 0.40 3 60 25 15 35 MAX 7 100 UNITS mm2 A/W nA Volts pF nsec Ohms -55°C TO 100°C 100°C 260° .