RF1S30P05 P-Channel Enhancement-Mode Power MOSFET

RF1S30P05 P-Channel Enhancement-Mode Power MOSFET

The RFG30P05, RFP30P05, RF1S30P05, and RF1S30P05SM P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in a.

Features

• 30A, 50V
• rDS(ON) = 0.065Ω
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• +175oC Operating Temperature Description The RFG30P05, RFP30P05, RF1S30P05, and RF1S30P05SM P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operate.