MCIRF2N65 |
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| Part Number | MCIRF2N65 |
| Manufacturer | Global Semiconductor |
| Description | Features The MCIRF2N65 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. The new energy efficient design also offers a dr... |
| Features |
The MCIRF2N65 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. The new energy efficient design also offers a drainto-source diode with a fast recovery time. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.
● 150℃ Tj operation ● Low Power Loss & Low cost ●Fast Switching ●RoHS Compliant Case Styles TO-220 TO-220F TO-252 TO-251 Ordering Information Part Number MCIRF2N65 MFIRF2N65 MJIRF2N65 MKIRF2N65 1、 GATE 2、 DRAIN 3、 SOURCE Package TO-220 T... |
| Document |
 MCIRF2N65 Data Sheet
PDF 2.18MB |
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| No. | Part # | Manufacture | Description | Datasheet |
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Global Semiconductor |
POWER MOSFET |
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Global Semiconductor |
POWER MOSFET |
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Global Semiconductor |
POWER MOSFET |
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Global Semiconductor |
POWER MOSFET |
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Global Semiconductor |
POWER MOSFET |
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SPORTON |
SMD Multilayer Chip Inductor |
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INPAQ |
High Frequency Chip Ceramic Inductor |
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INPAQ |
High Frequency Chip Ceramic Inductor |
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SPORTON |
SMD Multilayer Chip Inductor |
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Freescale Semiconductor |
i.MX25 Applications Processor |
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