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OPA7740EDD Infrared LED Chip AlGaAs / GaAs 1. Material Substrate GaAs (N Type) Epitaxial Layer AlGaAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Parameter Symbol Min Typ Max Unit Condition Characteristics Forward Voltage VF 2.1 V IF=350mA.
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| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
| 1 | OPA7716WDD |
AUK |
Infrared LED Chip |
|
| 2 | OPA7735H |
Roithner Lasertechnik |
Infrared LED Chip |
|
| 3 | OPA703 |
Burr-Brown |
OPERATIONAL AMPLIFIER |
|
| 4 | OPA704 |
Burr-Brown |
OPERATIONAL AMPLIFIER |
|
| 5 | OPA705 |
Burr-Brown |
Low-Cost / CMOS / Rail-to-Rail / I/O OPERATIONAL AMPLIFIERS |
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