Document | DataSheet (2.42MB) |
ESMT Flash FEATURES Organization – Memory cell array 4352 × 128K × 8 – Register 4352 × 8 – Page size 4352 bytes – Block size (256K + 16K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read .
Organization
– Memory cell array 4352 × 128K × 8
– Register 4352 × 8
– Page size 4352 bytes
– Block size (256K + 16K) bytes
Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
Mode control
– Serial input/output
– Command control
Number of valid blocks
– Min 2008 blocks
– Max 2048 blocks
F59D4G81CA (2L)
4 Gbit (512M x 8) 1.8V NAND Flash Memory
Power supply VCC = 1.7V to 1.95V
Access time
– Cell array to register 30 μs max
– Serial Read Cycle 30ns min (CL= 30pF)
Program/Erase time
–.
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | F59D4G81A |
Elite Semiconductor |
4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory | |
2 | F59D4G81XB |
ESMT |
1.8V NAND Flash Memory | |
3 | F59D4G161A |
Elite Semiconductor |
4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory | |
4 | F59D1G161A |
Elite Semiconductor |
1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory | |
5 | F59D1G161LB-45BG2M |
ESMT |
1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory |