logo
Search by part number and manufacturer or description
F59D4G81CA-45BG2L
zoom Click to view a larger image

F59D4G81CA-45BG2L 4 Gbit (512M x 8) 1.8V NAND Flash Memory

Document Datasheet DataSheet (2.42MB)

F59D4G81CA-45BG2L 4 Gbit (512M x 8) 1.8V NAND Flash Memory

ESMT Flash FEATURES  Organization – Memory cell array 4352 × 128K × 8 – Register 4352 × 8 – Page size 4352 bytes – Block size (256K + 16K) bytes  Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read .

Features


 Organization
  – Memory cell array 4352 × 128K × 8
  – Register 4352 × 8
  – Page size 4352 bytes
  – Block size (256K + 16K) bytes
 Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
 Mode control
  – Serial input/output
  – Command control
 Number of valid blocks
  – Min 2008 blocks
  – Max 2048 blocks F59D4G81CA (2L) 4 Gbit (512M x 8) 1.8V NAND Flash Memory
 Power supply VCC = 1.7V to 1.95V
 Access time
  – Cell array to register 30 μs max
  – Serial Read Cycle 30ns min (CL= 30pF)
 Program/Erase time
  –.

F59D4G81CA-45BG2L F59D4G81CA-45BG2L F59D4G81CA-45BG2L
Distributor Stock Price Buy

Similar Product

No. Part # Manufacture Description Datasheet
1 F59D4G81A
Elite Semiconductor
4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory Datasheet
2 F59D4G81XB
ESMT
1.8V NAND Flash Memory Datasheet
3 F59D4G161A
Elite Semiconductor
4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory Datasheet
4 F59D1G161A
Elite Semiconductor
1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory Datasheet
5 F59D1G161LB-45BG2M
ESMT
1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory Datasheet
More datasheet from ESMT
Since 2014 :: D4U Semiconductor :: (Privacy Policy & Contact)