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1N4448M

Part Number	1N4448M
Manufacturer	YS
Description	500mW DO-34 Hermetically Sealed Glass Fast Switching Diodes
Published	Mar 31, 2019
Detailed Description	DATA SHEET SEMICONDUCTOR 500 mW DO-34 Hermetically Sealed Glass Fast Switching Diodes 1N4448M AXIAL LEAD DO34 Absolut...
Datasheet	1N4448M PDF File

Overview

DATA SHEET SEMICONDUCTOR 500 mW DO-34 Hermetically Sealed Glass Fast Switching Diodes 1N4448M AXIAL LEAD DO34 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Value Units PD Power Dissipation 500 mW TSTG Storage Temperature Range -65 to +200 °C TJ Operating Junction Temperature +175 °C WIV Working Inverse Voltage 75 V IO Average Rectified Current 150 mA IFM Non-repetitive Peak Forward Current 450 mA IFSURGE Peak Forward Surge Current 2A These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features: Fast Switching Device (TRR <4.
0 nS) DO-34 Package (JEDEC DO-204) Through-Hole Device T...

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