WMO09N65VD Super Junction Power MOSFET

WMO09N65VD Super Junction Power MOSFET

WMOSTM VD is Wayon’s new high voltage power MOSFET family that is utilizing advanced technology for extremely low on-resistance and low gate charge performance. WMOSTM VD is suitable for applications which require superior power density and outstanding efficiency. Features  VDS =700V @ Tj,max  IDM.

Features

 VDS =700V @ Tj,max
 IDM =10.5A
 Typ. RDS(on) =1.0Ω
 100% UIS tested
 Pb-free plating, Halogen free Applications LED Lighting, Charger, Adapter, PC, LCD TV, Server D GD S TO-220F S G TO-263 G GD S TO-220 GD S TO-262 D DS G TO-251 S G TO-252 G DS S GD TO-251S3 TO-251S2 RoHS compliant Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current1) Pulsed drain current2) ( TC = 25°C ) ( TC = 100°C ) Gate-source voltage Avalanche energy, single pulse3) Avalanche energy, repetitive2) Avalanche current, repetitive2) Power.