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MA4AGBL912

MA-COM
Part Number MA4AGBL912
Manufacturer MA-COM
Description AlGaAs Beamlead PIN Diode
Published Mar 23, 2019
Detailed Description MA4AGBL912 AlGaAs Beamlead PIN Diode Features  Low Series Resistance  Low Capacitance  5 Nanosecond Switching Speed ...
Datasheet PDF File MA4AGBL912 PDF File

MA4AGBL912
MA4AGBL912

Overview
MA4AGBL912 AlGaAs Beamlead PIN Diode Features  Low Series Resistance  Low Capacitance  5 Nanosecond Switching Speed  Can be Driven by a Buffered +5V TTL  Silicon Nitride Passivation  Polyimide Scratch Protection  RoHS Compliant Description M/A-COM Technology Solutions MA4AGBLP912 is an Aluminum-Gallium-Arsenide anode enhanced, beam lead PIN diode.
AlGaAs anodes, which utilize M/A-COM Tech’s patented hetero-junction technology, produce less diode “On” resistance than conventional GaAs or silicon devices.
This device is fabricated in a OMCVD system using a process optimized for high device uniformity and extremely low parasitics.
The result is a diode with low series resistance, 4Ω, low...


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