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EN71SN10F

Part Number	EN71SN10F
Manufacturer	Eon Silicon Solution
Description	1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip
Published	Mar 5, 2019
Detailed Description	EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Fla...
Datasheet	EN71SN10F PDF File

Overview

EN71SN10F EN71SN10F 1.
8V NAND Flash + 1.
8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit • Device Packaging - 107 balls FBGA Area: 10.
5x13 mm; Height: 1.
2 mm • Operating Voltage - NAND : 1.
7V to 1.
95V - Mobile DDR SDRAM : 1.
7V to 1.
95V • Operating Temperature :-25 °C to +85 °C NAND FLASH • Voltage Supply: 1.
8V (1.
7V ~ 1.
95V ) • Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Multiplexed address/ data - Data Register : (2K + 64) x 8bit • Automatic Program and Erase - Page Program : (2K + 64) bytes - Block Erase : (128K + 4K) bytes • Page Read Operation - Page Size : (2K + 64) bytes - Random Read : 25µs (Max.
) - Serial Access : 45ns (Min.
) • Memory Cell: 1bit/Memory Cell • Fast Write Cycle Time - Page Program Time : 250µs (Typ.
) - Block Erase Time : 2ms (Typ.
) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout Du...

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EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip - Eon Silicon Solution

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