FR620N N-Channel Enhancement Mode Power MOSFET

FR620N N-Channel Enhancement Mode Power MOSFET

The FR620N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 200V,ID =6A RDS(ON) < 580mΩ @ VGS=10V (Typ:520mΩ) ● High density cell design for ultra low Rdson ● Fully characterized a.

Features

● VDS = 200V,ID =6A RDS(ON) < 580mΩ @ VGS=10V (Typ:520mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply FR620N Schematic diagram TO-251 top view Package Marking and Ordering Information Device Marking Device Device Package FR620N FR620N TO-251 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Vo.