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2N4236

TT
Part Number 2N4236
Manufacturer TT
Description SILICON PLANAR EPITAXIAL PNP TRANSISTOR
Published Jan 28, 2019
Detailed Description SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N4236 • VCBO=80V(Min), VCEO=80V(Min) • Hermetic TO-39 Metal package. • Ideally...
Datasheet PDF File 2N4236 PDF File

2N4236
2N4236

Overview
SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N4236 • VCBO=80V(Min), VCEO=80V(Min) • Hermetic TO-39 Metal package.
• Ideally suited for General Purpose and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 80V VCEO Collector – Emitter Voltage 80V VEBO Emitter – Base Voltage 7V IC Continuous Collector Current 1.
0A IB Base Current 0.
5A PD Total Power Dissipation at TA = 25°C 1.
0W Derate Above 25°C 5.
7mW/°C PD Total Power Dissipation at TC = 25°C 6W Derate Above 25°C 34mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIE...


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