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STL13DP10F6

STMicroelectronics
Part Number STL13DP10F6
Manufacturer STMicroelectronics
Description Dual P-CHANNEL POWER MOSFET
Published Jan 25, 2019
Detailed Description STL13DP10F6 Dual P-channel 100 V, 0.136 Ω typ., 3.3 A STripFET™ VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 double is...
Datasheet PDF File STL13DP10F6 PDF File

STL13DP10F6
STL13DP10F6

Overview
STL13DP10F6 Dual P-channel 100 V, 0.
136 Ω typ.
, 3.
3 A STripFET™ VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 double island Datasheet - production data Features 1 4 1 8 5 4 PowerFLAT™ 5x6 double island Figure 1.
Internal schematic diagram Order code STL13DP10F6 VDS 100 V RDS(on) max.
ID 0.
18 Ω 3.
3 A • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) • High avalanche ruggedness • Low gate drive power losses Applications • Switching applications Description This device is a dual P-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest RDS(on) in al...


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