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STH150N10F7-2

STMicroelectronics
Part Number STH150N10F7-2
Manufacturer STMicroelectronics
Description N-CHANNEL POWER MOSFET
Published Jan 22, 2019
Detailed Description STH150N10F7-2 N-channel 100 V, 0.0034 Ω typ., 110 A, STripFET™ F7 Power MOSFET in a H2PAK-2 package Datasheet − product...
Datasheet PDF File STH150N10F7-2 PDF File

STH150N10F7-2
STH150N10F7-2

Overview
STH150N10F7-2 N-channel 100 V, 0.
0034 Ω typ.
, 110 A, STripFET™ F7 Power MOSFET in a H2PAK-2 package Datasheet − production data TAB 2 3 1 H2PAK-2 Features Order code VDS RDS(on)max ID PTOT STH150N10F7-2 100 V 0.
0039 Ω 110 A 250 W • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Figure 1.
Internal schematic diagram ' 7$% Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more ef...


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