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SI2300

CCSemi
Part Number SI2300
Manufacturer CCSemi
Description N-Channel MOSFET
Published Nov 27, 2018
Detailed Description MOSFET N-Channel Enhancement Mode Field Effect Transistor SI2300 Features ◆ VDS=20V,RDS(ON)=40mΩ@VGS=4.5V,ID=5.0A ◆ VDS=...
Datasheet PDF File SI2300 PDF File

SI2300
SI2300

Overview
MOSFET N-Channel Enhancement Mode Field Effect Transistor SI2300 Features ◆ VDS=20V,RDS(ON)=40mΩ@VGS=4.
5V,ID=5.
0A ◆ VDS=20V,RDS(ON)=60mΩ@VGS=2.
5V,ID=4.
0A ◆ VDS=20V,RDS(ON)=75mΩ@VGS=1.
8V,ID=1.
0A Absolute Maximum Ratings Ta=25℃ Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous* TJ=125℃ -Pulsed Power Dissipation* Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range *Surface Mounted on FR4 Board, t≤10sec.
Symbol VDS VGS ID IDM PD RthJA Tj.
Tstg Rating 20 ±10 3.
8 15 1.
25 100 -55 to 150 Unit V V A A W ℃/W ℃ www.
canctech.
com Revision 2016/8/15 @2016-2017 CCSemi .
MOSFET Electrical Characteristics Ta=25℃ Parameter Symbol Test ...


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