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HM5N20R

H&M Semiconductor
Part Number HM5N20R
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description N-Channel Enhancement Mode Power MOSFET Description The HM15 uses advanced trench technology and design to provide ex...
Datasheet PDF File HM5N20R PDF File

HM5N20R
HM5N20R

Overview
N-Channel Enhancement Mode Power MOSFET Description The HM15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS = 200V,ID =A RDS(ON) < 650mΩ @ VGS=10V (Typ:520mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply HM15 D G S Schematic diagram HM15 Package Marking and Ordering Information Device Marking Device Device Package HM15  HM15 SOT-223 R...


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