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HM4490

H&M Semiconductor
Part Number HM4490
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM4490 N-Channel Enhancement Mode Power MOSFET Description The HM4490 uses advanced trench technology and design to pro...
Datasheet PDF File HM4490 PDF File

HM4490
HM4490

Overview
HM4490 N-Channel Enhancement Mode Power MOSFET Description The HM4490 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =200V,ID =3.
9A RDS(ON) < 79mΩ @ VGS=10V （Typ：56mΩ） ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Schematic diagram HM4490 Marking and pin assignment 100% ∆Vds TESTED! SOP-8 top view Package Marking and Ordering Information Device...


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