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HM4264

H&M Semiconductor
Part Number HM4264
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description  HM4264 N-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology and design to ...
Datasheet PDF File HM4264 PDF File

HM4264
HM4264

Overview
 HM4264 N-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS = 60V,ID =12A RDS(ON) < 11mΩ @ VGS=10V (Typ:8.
6mΩ) RDS(ON) < 14mΩ @ VGS=4.
5V (Typ:10.
3mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses Schematic diagram Application ● Power switching application ● Load switch Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size ...


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