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HM4264B

H&M Semiconductor
Part Number HM4264B
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM4264B N-Channel Enhancement Mode Power MOSFET Description The HM4264B uses advanced trench technology and design to p...
Datasheet PDF File HM4264B PDF File

HM4264B
HM4264B

Overview
HM4264B N-Channel Enhancement Mode Power MOSFET Description The HM4264B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS = 50V,ID =1A RDS(ON) < 7.
6mΩ @ VGS=10V (Typ:5.
7mΩ) RDS(ON) < 8.
0mΩ @ VGS=4.
5V (Typ:6.
3mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses Schematic diagram Application ● Power switching application ● Load switch Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package HM4264B HM4...


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