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HM4240

H&M Semiconductor
Part Number HM4240
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description N-Channel Enhancement Mode Power MOSFET Description The HM4240 uses advanced trench technology and design to provide exc...
Datasheet PDF File HM4240 PDF File

HM4240
HM4240


Overview
N-Channel Enhancement Mode Power MOSFET Description The HM4240 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =40V,ID =20A RDS(ON) <6.
6mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● PWM ● Load Switching 100% UIS TESTED! 100% ∆Vds TESTED! HM4240 Package Marking and Ordering Information Device Marking Device Device Package HM4240 HM4240 SOP8 Reel Size - Tape width - Quantity Absolute Maximum Rati...



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