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HM6N10PR

Part Number	HM6N10PR
Manufacturer	H&M Semiconductor
Description	N-Channel Enhancement Mode Power MOSFET
Published	Nov 27, 2018
Detailed Description	N-Channel Enhancement Mode Power MOSFET Description The HM6N10PR uses advanced trench technology and design to provide e...
Datasheet	HM6N10PR PDF File

Overview

N-Channel Enhancement Mode Power MOSFET Description The HM6N10PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply HM6N10PR D G S Schematic diagram HM6N10PR SOT-89 top view Package Marking and Ordering Information Device Marking Device Device Package HM6N10PR H...

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