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100VDS/±20VGS/2. 7A(ID) N-Channel Enhancement Mode MOSFET
FeaVtDuSSr=e1s00V/VGSS=±20V/ID=2. 7A
RDS(ON)=180mΩ(Max. )@VGS=10V RDS(ON)=240mΩ(Max. )@VGS=4. 5V ESDprotect Reliable and Rugged High Density Cell Design For Ultra Low
On-Resistance
Applications
z Synchronous Rectification z Power Management in Inverter System
Switching Time Test Circuit and Waveforms
PinDescription
Marking and pin Assignment
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Marking and pin Assignment
SOT-23 -3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
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