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HM2N10B

Part Number	HM2N10B
Manufacturer	H&M Semiconductor
Description	N-Channel Enhancement Mode Power MOSFET
Published	Nov 27, 2018
Detailed Description	HM1% N-Channel Enhancement Mode Power MOSFET Description The HM1% uses advanced trench technology and design to p...
Datasheet	HM2N10B PDF File

Overview

HM1% N-Channel Enhancement Mode Power MOSFET Description The HM1% uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS = 100V,ID = 2A RDS(ON) <240mΩ @ VGS=10V (Typ:210mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation D G S Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment SOT-23 top view Package Marking and Ordering Information Device Marking Device Device P...

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