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HM2310

H&M Semiconductor
Part Number HM2310
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM2310 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2310 uses advanced trench technology to provide excell...
Datasheet PDF File HM2310 PDF File

HM2310
HM2310

Overview
HM2310 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2310 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
GENERAL FEATURES ● VDS =60V,ID =3A RDS(ON) <105mΩ @ VGS=10V RDS(ON) < 125mΩ @ VGS=4.
5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D G S Schematic diagram 2310 Marking and pin Assignment Application ●Battery Switch ●DC/DC Converter SOT-23 -3L top view Package Marking And Ordering Information Device Marking Device Device Package 2310 HM2310 SOT...


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