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HM2318B

Part Number	HM2318B
Manufacturer	H&M Semiconductor
Description	N-Channel Enhancement Mode Power MOSFET
Published	Nov 27, 2018
Detailed Description	HM2318B N Channel Enhancement Mode MOSFET DESCRIPTION HM2318B is the N-Channel logic enhancement mode power field effect...
Datasheet	HM2318B PDF File

Overview

HM2318B N Channel Enhancement Mode MOSFET DESCRIPTION HM2318B is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION SOT-23 3 D GS 12 1.
Gate 2.
Source 3.
Drain PART MARKING SOT-23 3 18YW 12 Y: Year Code W: Week Code FEATURE 40V/3.
9A, RDS(ON) = 42mΩ (Typ.
) @VGS = 10V 40V/3.
5A, R...

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