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HM3416B

H&M Semiconductor
Part Number HM3416B
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM3416B N-Channel Enhancement Mode Power MOSFET Description The HM3416B uses advanced trench technology to provide exce...
Datasheet PDF File HM3416B PDF File

HM3416B
HM3416B

Overview
HM3416B N-Channel Enhancement Mode Power MOSFET Description The HM3416B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.
8V.
This device is suitable for use as a load switch or in PWM applications .
It is ESD protested.
General Features ● VDS = 20V,ID =6A RDS(ON) < 27mΩ @ VGS=2.
5V RDS(ON) < 22mΩ @ VGS=4.
5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram 3416 Marking and pin assignment Application ● PWM application ● Load switch SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package ...


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