DatasheetsPDF.com

HM3018SR

Part Number	HM3018SR
Manufacturer	H&M Semiconductor
Description	N-Channel Enhancement Mode Power MOSFET
Published	Nov 27, 2018
Detailed Description	J M SOT-523 Plastic-Encapsulate MOSFETS HM3018SR N-channel MOSFET V(BR)DSS 30 V RDS(on)MAX 8Ω@4V 13Ω@2.5V ID 100...
Datasheet	HM3018SR PDF File

Overview

J M SOT-523 Plastic-Encapsulate MOSFETS HM3018SR N-channel MOSFET V(BR)DSS 30 V RDS(on)MAX 8Ω@4V 13Ω@2.
5V ID 100mA SOT-523 1.
GATE 2.
SOURCE 3.
DRAIN FEATURE z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for Portable equipment z Easily designed drive circuits z Easy to parallel MARKING APPLICATION z Interfacing , Switching Equivalent Circuit MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current RθJA Thermal Resistance, Junction-to-Ambient PD Power Dissipation TJ Junction Temperature Tstg Storage Temperature Value 30 ±20 ...

Similar Datasheet

HM3018 N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM3018JR N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM3018KR N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor
HM3018SR N-Channel Enhancement Mode Power MOSFET - H&M Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)