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HM3400B

H&M Semiconductor
Part Number HM3400B
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description +03400% N-Channel Enhancement Mode Power MOSFET DESCRIPTION The +03400% uses advanced trench technology to provide ex...
Datasheet PDF File HM3400B PDF File

HM3400B
HM3400B

Overview
+03400% N-Channel Enhancement Mode Power MOSFET DESCRIPTION The +03400% uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
GENERAL FEATURES ● VDS = 30V,ID = 5.
8A RDS(ON) < 59mΩ @ VGS=2.
5V RDS(ON) < 45mΩ @ VGS=4.
5V RDS(ON) < 41mΩ @ VGS=10V D G S Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOT-23 top view Package Marking And Ordering Information Device Marking ...


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