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HM2300B

H&M Semiconductor
Part Number HM2300B
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM2300B N-Channel Enhancement Mode Power MOSFET Description The HM2300B uses advanced trench technology to provide exce...
Datasheet PDF File HM2300B PDF File

HM2300B
HM2300B

Overview
HM2300B N-Channel Enhancement Mode Power MOSFET Description The HM2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a battery protection or in other switching application.
General Features ● VDS = 20V,ID = 4.
5A RDS(ON) < 40mΩ @ VGS=2.
5V RDS(ON) < 33mΩ @ VGS=4.
5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package D G S Schematic diagram 2300 Marking and pin assignment Application ●Battery protection ●Load switch ●Power management SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Packag...


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