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HM2302KR

H&M Semiconductor
Part Number HM2302KR
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM2302KR N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2302KR uses advanced trench technology to provide ex...
Datasheet PDF File HM2302KR PDF File

HM2302KR
HM2302KR


Overview
HM2302KR N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2302KR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
GENERAL FEATURES ● VDS = 20V,ID = 2.
9A RDS(ON) < 59mΩ @ VGS=2.
5V RDS(ON) < 45mΩ @ VGS=4.
5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D G S Schematic diagram 3D 2302 G1 2S Marking and pin Assignment Application ●Battery protection ●Load switch ●Power management SOT-323 top view Package Marking And Ordering Information Device Marking Devi...



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