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HM2302E

H&M Semiconductor
Part Number HM2302E
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description N-Channel Trench Power MOSFET General Description The HM2302E uses advanced trench technology to provide excellent RDS(O...
Datasheet PDF File HM2302E PDF File

HM2302E
HM2302E

Overview
N-Channel Trench Power MOSFET General Description The HM2302E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a battery protection or in other switching application.
Features ● VDS = 15V,ID =2.
0A RDS(ON) < 55mΩ @ VGS =4.
5V RDS(ON) <85mΩ @ VGS =2.
5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● Battery protection ● Load switch ● Power management HM2302E Schematic Diagram SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package 2302E HM2302E SOT-23 Reel Size Ø180mm Tab...


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