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HM4606

H&M Semiconductor
Part Number HM4606
Manufacturer H&M Semiconductor
Description N & P-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM4606 N and P-Channel Enhancement Mode Power MOSFET Description The HM4606 uses advanced trench technology to provide ...
Datasheet PDF File HM4606 PDF File

HM4606
HM4606

Overview
HM4606 N and P-Channel Enhancement Mode Power MOSFET Description The HM4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .
This device is suitable for use as a load switch or in PWM applications.
General Features ● N-Channel VDS = 30V,ID =7.
0A RDS(ON) < 31mΩ @ VGS=10V RDS(ON) < 43mΩ @ VGS=4.
5V ● P-Channel VDS = -30V,ID = -5.
1A RDS(ON) < 95mΩ @ VGS=-4.
5V RDS(ON) < 65mΩ @ VGS=-10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package N-channel P-channel Schematic diagram HM4606 Marking and pin assignment Application ● PWM applications ● Load switch ● Power management SOP-8 top view Package Marking and O...


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