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HM2803D

H&M Semiconductor
Part Number HM2803D
Manufacturer H&M Semiconductor
Description Dual P-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM2803D Dual P-Channel Enhancement Mode Power MOSFET Description The HM2803D uses advanced trench technology to provid...
Datasheet PDF File HM2803D PDF File

HM2803D
HM2803D

Overview
HM2803D Dual P-Channel Enhancement Mode Power MOSFET Description The HM2803D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
D1 D2 General Features ● VDS = -20V,ID = -5.
0A RDS(ON) <75mΩ @ VGS=-2.
5V RDS(ON) < 52mΩ @ VGS=-4.
5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch ● Power management G1 G2 S1 S2 Schematic diagram DFN 2x2 Package S1 G1 D2 Pin 1 Pin 1 Top D1 G2 S2 Bottom Package Marking and Ordering Information Device Marking Device...


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