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HM4887

H&M Semiconductor
Part Number HM4887
Manufacturer H&M Semiconductor
Description Dual P-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM4887 Dual P-Channel Enhancement Mode Power MOSFET Description The HM4887 uses advanced trench technology and design ...
Datasheet PDF File HM4887 PDF File

HM4887
HM4887

Overview
HM4887 Dual P-Channel Enhancement Mode Power MOSFET Description The HM4887 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
It is ESD protested.
D1 G1 G2 D2 General Features ● VDS =-100V,ID =-4.
5A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ) S1 S2 Schematic diagram ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance Application ● Power management in notebook computer ● Portable equipment and battery powered systems HM4887 Marking and pin Assignment 100% UIS TESTED! 100% ∆Vds TESTED! SOP-8 top view Pack...


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