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HM4449

H&M Semiconductor
Part Number HM4449
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM4449 P-Channel Enhancement Mode Power MOSFET Description The HM4449 uses advanced trench technology to provide excel...
Datasheet PDF File HM4449 PDF File

HM4449
HM4449

Overview
HM4449 P-Channel Enhancement Mode Power MOSFET Description The HM4449 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.
5V.
This device is suitable for use as a load switch or in PWM applications.
General Features ● VDS = -30V,ID = -7A RDS(ON) < 70mΩ @ VGS=-4.
5V RDS(ON) < 42mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Application ●PWM applications ●Load switch ●Power management D G S Schematic diagram HM4449 Marking and pin Assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package HM4449 HM4449 SO...


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