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HM2309APR

H&M Semiconductor
Part Number HM2309APR
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description P-Channel Enhancement Mode Power MOSFET Description The HM2309APR uses advanced trench technology and design to provide ...
Datasheet PDF File HM2309APR PDF File

HM2309APR
HM2309APR

Overview
P-Channel Enhancement Mode Power MOSFET Description The HM2309APR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .
This device is well suited for use as a load switch or in PWM applications.
General Features ● VDS =-60V,ID =-5A RDS(ON) <120mΩ @ VGS=-10V RDS(ON) <170mΩ @ VGS=-4.
5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Load switch ● PWM application HM2309APR Schematic diagram HM2309APR SOT-89 -3L top view Package Marking and Ordering Information Device Marking HM2309APR Device HM2309APR Device Package SOT-89-3L Reel Size Ø18...


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