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2N834

Part Number	2N834
Manufacturer	Motorola
Description	NPN silicon epitaxial transistors
Published	Nov 8, 2018
Detailed Description	8342N (SILICON) 2N835 NPN silicon epitaxial transistors for high- speed switching applications. CASE 22 \ (TO·18) Collec...
Datasheet	2N834 PDF File

Overview

8342N (SILICON) 2N835 NPN silicon epitaxial transistors for high- speed switching applications.
CASE 22 \ (TO·18) Collector connected to case MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Peak Total Device DisSipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Total Device Dissipation @ TC = 100°C Derate above 100°C Operating and Storage Junction Temperature Range Symbol VCES VCB VEB Ie PD PD PD TJ,Tstg 2N834 2N835 30 40 5.
0 200 0.
3 2.
0 20 25 3.
0 1.
0 6.
67 0.
5 6.
67 -65 to +175 Unit Vdc Vdc Vdc mAdc Watt mwflC Watt mW/oC Watt mWflC °c FIGURE 1 - TURN·ON AND TURN·OFF TIM...

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