N-channel Power MOSFET - STMicroelectronics
Description
STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N
N-channel 600 V, 0.
168 Ω typ.
, 17 A MDmesh™ II Power MOSFETs in TO-220FP, I²PAK, TO-220 and TO-247 packages
Datasheet − production data
TAB Features
3 2 1
TO-220FP
7$%
TO-220
123
I2PAK
3 2 1
TO-247
Order codes VDS @Tjmax
STF24NM60N
STI24NM60N STP24NM60N
650 V
STW24NM60N
RDS(on) max.
0.
19 Ω
ID 17 A
• 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance
Figure 1.
Internal schematic diagram
'RU7$%
* 6
$0Y
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.
This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
It is therefore suitable for the most demanding high efficiency converters.
Order code STF24NM60N STI24NM60N STP24NM60N STW24NM60N
Tab...
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