N-channel Power MOSFET - STMicroelectronics
Description
STL7NM60N
N-channel 600 V, 0.
805 Ω, 5.
8 A PowerFLAT™ 5x5 MDmesh™ II Power MOSFET
Features
Order code STL7NM60N
VDSS @ TJMAX
650 V
RDS(on) max.
< 0.
90 Ω
ID 5.
8 A(1)
t(s) 1.
The value is rated according Rthj-case
c ■ 100% avalanche tested u ■ Low input capacitance and gate charge rod ■ Low gate input resistance
te P Application le ■ Switching applications
bso Description - O This device is an N-channel Power MOSFET ) developed using the second generation of t(s MDmesh™ technology.
This revolutionary Power c MOSFET associates a vertical structure to the u company’s strip layout to yield one of the world’s d lowest on-resistance and gate charge.
It is ro therefore suitable for the most demanding high Obsolete P efficiency converters.
87 5
11 4
12
14
1
PowerFLAT™ 5x5
Figure 1.
Internal schematic diagram
D
D
D
Pin 1
14
13
12 11 G
(not connected)
S2 Drain
10 S
S3
9S
S4 5
6
7 8S
D
D
D
Top view
Table 1.
Device summary Order code STL7NM60N
Marking 7NM60N
Package PowerFLAT™ 5x5
Packaging Tape and reel
November 2011
Doc ID 18348 Rev 2
1/13
www.
st.
com
13
Contents
Contents
STL7NM60N
1
Electrical ratings .
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Electrical characteristics .
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1 Electrical characteristics (curves) .
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Test circuits .
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Package mechanical data .
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Obsolete Product(s) - Obsolete Product(s) 5
Revision history .
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2/13
Doc ID 18348 Rev 2
STL7NM60N
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
600
...
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