80N30 N-Channel Enhancement Mode Power MOSFET

80N30 N-Channel Enhancement Mode Power MOSFET

The RM80N30LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ƽ VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V ƽ High density cell design for ultra low Rdson ƽ Fully c.

Features

ƽ VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V ƽ High density cell design for ultra low Rdson ƽ Fully characterized avalanche voltage and current ƽ Good stability and uniformity with high EAS ƽ Excellent package for good heat dissipation Application ƽ Power switching application ƽ Hard switched and high frequency circuits ƽ Uninterruptible power supply Schematic diagram Marking and pin assignment 100% UIS TESTED! Package Marking and Ordering Information Device Marking Device Device Package 80N30 RM80N30LD TO-252-2L Reel Size - D GS TO-252-2L top view Tape w.